Laser Annealing Equipment —— IGBT Backside Annealing Process
 SLD500 |
 SLD300 |
The SLD Laser Annealing products provide solutions to fabricate power devices for transportation & consumer electronics with backside laser annealing capability. The SLD500 is designed for Si-IGBT. The SLD300 is designed for SiC-MOSFET.
Product Features
● High Precision Stage System
● Flexible Substrate Applications
● Rich Application Experience
● Excellent Optical System
● Precise Thermal Effect Control
● Low COO
Specifications
| Model | SLD500 | SLD300 |
| Wafer Size | 6"/8"/12" Wafer (Si) | 2"/4"/6" WaferSiC |
| Wafer Thickness | 50μm≤ Taiko≤ 150μm 150μm≤ Non-Taiko≤ 800μm 800μm≤ Bonding≤ 1200μm |
150μm≤Non-Taiko≤800μm |
| Scanning Mode | Scan & Step | Scan & Step |
| Activation Depth | ≥3μm (≥4μm Option) | / |
Products
CONTACT US
No.1525 Zhangdong Road Zhangjiang Hi-Tech Park Shanghai
info@smee.com.cn
+86-21-51315131
+86-21-58969020
